Benutzeranleitung / Produktwartung CY7C1546V18 des Produzenten Cypress Semiconductor
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72-Mbit DDR-II+ SRAM 2-W ord Burst Architecture (2.0 Cycle Read Latency) CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-06550 Rev .
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 2 of 28 Logic Block Diagram (CY7C1546V18) Logic Block Diagram (CY7C1557V18) CLK A (21:0) Gen. K K Control Logic Address Register Read Add. Decode Read Data Reg.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 3 of 28 Logic Block Diagram (CY7C1548V18) Logic Block Diagram (CY7C1550V18) CLK A (20:0) Gen. K K Control Logic Address Register Read Add. Decode Read Data Reg.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 4 of 28 Pin Configuration The pin configuration for CY7C1546V18, CY7C 1557 V18, CY7C1548V18, and CY7C15 50V18 follow .
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 5 of 28 CY7C1548V18 (4M x 1 8) 123456789 10 11 A CQ AA R / W BWS 1 K NC/14 4M LD AA C Q B NC DQ9 NC A NC/288M.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 6 of 28 Pin Definitions Pin Name IO Pin D escription DQ [x:0] Input and Output Synchronous Dat a Input or Output Signals . Inputs are sampled on the rising edge of K and K clocks during valid write operations.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 7 of 28 ZQ Input Output Impe dance Matchin g Input . This input is used to tune the device out puts to the system data bus impedance. CQ, CQ , and Q [x:0] output impedance are set to 0.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 8 of 28 Functional Overview The CY7C1546V18, CY7C1557V18, CY7C1 548V18, and CY7C1550V18 are synchronous pipelined Burst SRAMs equipped with a DDR interface. Accesses are initiated on the ri sing edge of the positive input clock (K).
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 9 of 28 Echo Clocks Echo clocks are provided on the DDR- II+ to simplify data capture on high-speed systems. T wo echo clocks ar e generated by the DDR-II+. CQ is referenced with respect to K a nd CQ is refer- enced with respect to K .
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 10 of 28 T ruth T able The truth table for CY7C1546V18, CY7C1557V18, CY7C1548V18, and CY7C1550V18 follows. [3, 4, 5, 6, 7, 8] Operation K LD R/W DQ DQ Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edges.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 1 1 of 28 Write Cycle Descriptions The write cycle description t able for CY7C1 557V18 follows. [3, 9] BWS 0 K K Comments L L–H – During the data portion of a write sequence, th e single byte (D [8:0] ) is written into the device.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 12 of 28 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA p ackage. This part is fully comp liant with IEEE S tandard #1 149.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 13 of 28 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister .
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 14 of 28 T AP Controller St ate Diagram The state diagram for the T AP controller follows.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 15 of 28 T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [1 1, 12, 13] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 16 of 28 T AP AC Switching Characteristics Over the Operating Range [12, 14] Parameter Description Min Max Un.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 17 of 28 Identification R egi ster Definitions Instruction Field Va l u e Descriptio n CY7C1546V18 CY7C1557V18 C Y7C1548V18 CY7C15 50V18 Revision Numb er (31:29) 000 000 000 000 V ersio n number .
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 18 of 28 Boundary Scan Order Bit Number Bump ID Bit Number Bump ID Bit Number Bump ID Bit Number Bump ID 0 6R.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 19 of 28 Power Up Sequence in DDR-II+ SRAM DDR-II+ SRAMs must be powered up and i nitialized in a predefined manner to prevent unde fined operations. During power up, when the DOFF is tied HIGH, the DLL is locked a fter 2048 cycles of st able clock.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 20 of 28 Maximum Ratings Exceeding maximum ratin gs may impair the useful life o f the device. These user guidelines are not teste d. S torage T emperature ....
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 21 of 28 I SB1 Automatic Power down Current Max V DD , Both Ports Deselected, V IN ≥ V IH or V IN ≤ V IL .
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 22 of 28 AC T est Loads and W aveforms Figure 4. AC T est Loads and Waveforms 1.25V 0.25V R = 50 Ω 5p F INCLUDING JIG AND SCOPE ALL INPUT PULSES Device R L = 50 Ω Z 0 = 50 Ω V REF = 0.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 23 of 28 Switching Characteristics Over the Operating Range [21, 22] Cypress Parameter Consor tium Parameter .
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 24 of 28 Switching W aveforms Read/Writ e/Deselect Sequence [29, 30, 31, 32] Figure 5.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 25 of 28 Ordering Information Not all of the speed, package, and tem perature ranges are available. Contact your local sales represe ntative or visit www .cypress.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 26 of 28 300 CY7C1546V18-300BZC 51-85195 165-Ball Fine Pi tch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1557V18-300BZC CY7C1548V18-300BZC CY7C1550V18-300BZC CY7C1546V18-300BZXC 51-85195 165-Ball Fine Pi tch Ball Grid Array (15 x 17 x 1.
CY7C1546V18, CY7C1557V18 CY7C1548V18, CY7C1550V18 Document Number: 001-06550 Rev . *E Page 27 of 28 Package Diagram Figure 6. 165-Ball FBGA (15 x 17 x 1.
Document Number: 001-06550 Rev . *E Revised March 1 1, 2008 Page 28 of 28 QDR RAMs an d Quad Data R ate RAMs comprise a new family o f products devel oped by Cypress, IDT , NEC, Renesas, and Samsung. All pr oduct and comp any names ment ioned in this do cument are the tr ad emarks of their respe ctive hold ers.
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