Benutzeranleitung / Produktwartung CY7C1510KV18 des Produzenten Cypress
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72-Mbit QDR™-II SRAM 2-W ord Burst Architecture CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1 709 • 408-943-2600 Document Number: 001-00436 Rev .
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 2 of 30 Logic Block Diagram (CY7C1510KV18) Logic Block Diagram (CY7C1525KV18) 4M x 8 Array CLK A (21:0) Gen. K K Control Logic Address Register D [7:0] Read Add.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 3 of 30 Logic Block Diagram (CY7C1512KV18) Logic Block Diagram (CY7C1514KV18) 2M x 18 Array CLK A (20:0) Gen. K K Control Logic Address Register D [17:0] Read Add.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 4 of 30 Pin Configuration The pin configurations for CY7C1510KV18, CY7C 1525 KV18, CY7C1512KV18, and CY7C1514KV18 fo llow . [1] 165-Ball FBGA (13 x 15 x 1 .
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 5 of 30 CY7C1512KV18 (4M x 18) 123456789 10 11 A CQ NC/144M A WPS BWS 1 K NC/288M RPS AA C Q B NC Q9 D9 A.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 6 of 30 Pin Definitions Pin Name I/O Pin Description D [x:0] Input- Synchronous Data Input Signals . Sampled on the rising edge of K and K clocks during valid write operations.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 7 of 30 CQ Echo Clock CQ Referenced with Respect to C . This is a free running clock and is synchronized to the input clock for output data (C) of the QDR-II.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 8 of 30 Functional Overview The CY7C1510KV18, CY7C1525KV18, CY7C1512 KV18, and CY7C1514KV18 are synchronous pipelin ed Burst SRAMs with a read port and a write port.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 9 of 30 Echo Clocks Echo clocks are provided on the QD R-II to simplify data capture on high speed systems. T wo echo clocks are generated by the QDR-II. CQ is referenced with respect to C and CQ is referenced with respect to C .
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 10 of 30 T ruth T able The truth table for CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and CY7C1514KV18 follow . [2, 3, 4, 5, 6, 7] Operation K RPS WPS DQ DQ Write Cycle: Load address on the rising ed ge of K ; input write data on K and K rising edges.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 1 1 of 30 Write Cycle Descriptions The write cycle description t able for CY7C1525KV18 follow . [2, 8] BWS 0 K K L L–H – During the data portion of a write sequence, the single b yte (D [8:0] ) is written into the device.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 12 of 30 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA package. This part is fully complia nt with IEEE S tandard #1 149.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 13 of 30 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister .
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 14 of 30 T AP Controller St ate Diag ram The state diagram for the T AP controller follows.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 15 of 30 T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [10, 1 1 , 12] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V o ltage I OH = − 2.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 16 of 30 T AP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Ma.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 17 of 30 Identification R egi ster Definitions Instruction Field Va l u e Description CY7C1510KV18 CY7C1525KV18 CY7 C1512KV18 CY7C1514KV18 Revision Numb er (31:29) 000 000 000 000 V ersion number .
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 18 of 30 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bum p ID 0 6R 28 10G 56 6A 8.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 19 of 30 Power Up Sequence in QDR-II SRAM QDR-II SRAMs must be powered up and initialized in a predefined manner to prevent unde fined operation s. Power Up Sequence ■ Apply power and drive DOFF either HIGH or LOW (All other inputs can be HIGH or LOW).
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 20 of 30 Maximum Ratings Exceeding maximum ratin gs may impair the useful life of the device. These user guidelines are not teste d. S torage T emperat ure .
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 21 of 30 I DD [19] V DD Operating Supply V DD = Max, I OUT = 0 mA, f = f MAX = 1/t CYC 200 MHz (x8) 540 m.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 22 of 30 Cap acit ance T ested initially and after any design or process change that may affect these parameters. Parameter Description T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 23 of 30 Switching Characteristics Over the Operating Range [20, 21] Cypress Parameter Consorti um Parame.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 24 of 30 Output T imes t CO t CHQV C/C Clock Rise (or K/K in single clock mode) to Data V alid – 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns t DOH t CHQX Data Output Hold af ter Output C/C Clock Rise (Active to Active) –0.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 25 of 30 Switching W aveforms Figure 5. Read/Write/Deselect Sequence [2 6, 27, 28] K 1 2 34 5 8 10 6 7 K .
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 26 of 30 Ordering Information The following table lists all possible speed, package, and temperat ure range options supported for these devi ces. Note that som e options listed may not be availabl e for order entry .
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 27 of 30 250 CY7C1510KV18-250BZC 51-85180 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1525KV18-250BZC CY7C1512KV18-250BZC CY7C1514KV18-250BZC CY7C1510KV18-250BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 28 of 30 167 CY7C1510KV18-167BZC 51-85180 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1525KV18-167BZC CY7C1512KV18-167BZC CY7C1514KV18-167BZC CY7C1510KV18-167BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Document Number: 001-00436 Rev . *E Page 29 of 30 Package Diagram Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø 0 . 2 5MCAB Ø0.
Document Number: 001-00436 Rev . *E Revised March 30, 2009 Page 30 of 30 QDR RAMs an d Quad Data Rate RAMs comp rise a new family of product s develope d by Cypress, IDT , NEC, Renesas, and Samsung. A ll pr oduct an d company n ames mentione d in this do cument are the tr ademark s of their re specti ve holders .
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